Temperature Dependence of Urbach Energy in Non-Crystalline Semiconductors
نویسندگان
چکیده
منابع مشابه
Temperature dependence of band gaps in semiconductors: electron-phonon interaction
Most of the experimental results for the temperature dependence of gaps have been obtained for elemental or binary semiconductors.[1] Lately, however, ternary materials such as those with chalcopyrite structure have begun to be investigated. Among the chalcopyrites under examination are II-IV-V2 compounds (e.g. ZnGeAs2) and those in which the divalent cation is replaced by either monovalent cop...
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We have theoretically investigated, by ab initio techniques, the phonon properties of several semiconductors with chalcopyrite structure. Comparison with experiments has led us to distinguish between materials with d electrons in the valence band (e.g., CuGaS2, AgGaS2) and those without d electrons (e.g., ZnSnAs2). The former exhibit a rather peculiar nonmonotonic temperature dependence of the ...
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The Urbach tail in crystalline GaAs and Si due to thermal vibration is evaluated in the temperature range 0—810 K. Recent experiments suggest that there is no thermally induced Urbach tail in undoped GaAs. This is most unexpected since thermally induced tails at the absorption edge having the Urbach form and widths Eo(T) linear in T are observed in a wide range of crystalline and amorphous semi...
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ژورنال
عنوان ژورنال: Optics and Photonics Journal
سال: 2020
ISSN: 2160-8881,2160-889X
DOI: 10.4236/opj.2020.109022